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| VISHAY BAT54-02V Vishay Semiconductors Schottky Diode in SOD-523 Features * These diodes feature very low turn-on voltage and fast switching. * These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. * Space saving SOD-523 package 1 1 2 2 18554 Mechanical Data Case:SOD-523 Plastic Package Weight: approx. 1.6 mg Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/10 sec. at terminals Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAT54-02V Ordering code BAT54-02V-GS18 or BAT54-02V-GS08 V Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage=Working peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current Power dissipation Test condition Symbol VRRM Value 30 Unit V IF IFRM IFSM Ptot 200 300 600 230 mA mA mA mW Document Number 85633 Rev. 1.2, 27-Apr-04 www.vishay.com 1 BAT54-02V Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Junction soldering point Junction temperature Storage temperature range Test condition Symbol RthJS Tj TS Value 100 125 - 65 to + 150 VISHAY Unit K/W C C Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Reverse Breakdown voltage Leakage current Forward voltage Test condition 100 A pulses Pulse test tp < 300 s, < 2 % at VR = 25 V IF = 0.1 mA, tp < 300 s, < 2 % IF = 1 mA, tp < 300 s, < 2 % IF = 10 mA, tp < 300 s, < 2 % IF = 30 mA, tp < 300 s, < 2 % IF = 100 mA, tp < 300 s, < 2 % Diode capacitance Reverse recovery time VR = 0 V, f = 1 MHz IF = 10 mA , IR = 10 mA to IR = 1 mA, RL = 100 VF VF VF VF VF Ctot trr Symbol V(BR) Min 30 2 240 320 400 500 1000 12 5 Typ. Max Unit V A mV mV mV mV mV pF ns Typical Characteristics (Tamb = 25 C unless otherwise specified) 1000 100 T j = 125 C 10 1 0.1 0.01 gbat54-ht3_01 1000 100 40 C IR in A T j = 125 C 100 C 75 C 50 C I F in mA 10 1 0.1 0.01 25 C 25 C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 VF in V gbat54-ht3_02 15 20 VR in V 25 30 Fig. 1 Typical Forward Voltage Forward Current at Various Temperatures Fig. 2 Typical Variation of Reverse Current at Various Temperatures www.vishay.com 2 Document Number 85633 Rev. 1.2, 27-Apr-04 VISHAY BAT54-02V Vishay Semiconductors 14 12 10 C in pF 8 6 4 2 0 0 4 8 12 16 20 24 28 gbat54-ht3_03 VR in V Fig. 3 Typical Capacitance C vs. Reverse Applied Voltage VR Package Dimensions in mm (Inches) 0.15 (0.006) 1.6 (0.062) 0.8 (0.031) 0.3 (0.012) 0.15 A A ISO Method E 1.2 (0.047) 0.6 (0.023) 16864 Document Number 85633 Rev. 1.2, 27-Apr-04 www.vishay.com 3 BAT54-02V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85633 Rev. 1.2, 27-Apr-04 |
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